Through-hole electrode substrate

ABSTRACT

A through-hole electrode substrate includes a substrate including a through-hole extending from a first aperture of a first surface to a second aperture of a second surface, an area of the second aperture being larger than that of the first aperture, the through-hole having a minimum aperture part between the first aperture and the second aperture, wherein an area of the minimum aperture part in a planer view is smallest among a plurality of areas of the through-hole in a planer view, a filler arranged within the through-hole, and at least one gas discharge member contacting the filler exposed to one of the first surface and the second surface.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/266,203, filed on Feb. 4, 2019, which, in turn, is a continuation ofU.S. patent application Ser. No. 15/159,323 (now U.S. Pat. No.10,256,176), filed on May 19, 2016, which in turn, is based upon andclaims the benefit of priority from Japanese Patent Application No.2013-241392, filed on Nov. 21, 2013, and PCT Application No.PCT/JP2014/080649, filed on Nov. 19, 2014, the entire contents of whichare incorporated herein by reference.

FIELD

The embodiment of the invention is related to a through-hole electrodesubstrate arranged with a through-hole electrode which passes through atop surface and rear surface of a substrate. In particular, theembodiment of the invention is related to a through-hole electrodesubstrate used as an interposer substrate for connecting a plurality ofelements. In addition, the embodiment of the invention is related to asemiconductor device which uses the through-hole electrode substrate.

BACKGROUND

In recent years, the development of through-hole electrode 25 substratesarranged with a conductive part which conducts a top surface and rearsurface of a substrate as an interposer between LSI chips isprogressing. This type of through-hole electrode substrate is formedwith a through-hole electrode by filling a conductive material usingelectrolytic plating and the like within a through-hole.

A LSI chip which has a narrow pitch and wiring with short dimensions isarranged on an upper surface of a through-hole electrode substrate. Inaddition, a semiconductor mounted substrate which has a wide pitch andwiring with long dimensions is arranged on the rear surface of athrough-hole electrode substrate. The documents (see, for example,Japanese Patent Application No. 2005-514387, Japanese Patent ApplicationNo. 2010-548586, Japanese Patent Application No. 2003-513037, JapanesePatent Application No. 2011-528851, PCT Publication 2010/087483, PCTPublication 2005/034594, PCT Publication 2003/007370, PCT Publication2011/024921, Japanese Patent No. 4241202 Specification, Japanese PatentNo. 4203277 Specification, Japanese Patent No. 4319831 Specification,Japanese Patent No. 4022180 Specification, Japanese Patent No. 4564342Specification, Japanese Patent No. 4835141 Specification, JapanesePatent No. 5119623 Specification, Japanese Laid Open Patent No.2009-23341, Japanese Patent No. 2976955 Specification, Japanese LaidOpen Patent No. 2003-243396, Japanese Laid Open Patent No. 2003-198069and Japanese Patent No. 4012375 Specification) are conventionaltechnologies of a through-hole electrode substrate.

In the through-hole electrode, a conductive material is filled into athrough-hole as a filler as described above, or a conductive film isformed along the side wall of the through-hole and an insulating resinis filled to the remainder of the through-hole. In the through-holeelectrode, a technique is known in which the interior of thethrough-hole is provided with a taper or a plurality of crater shapedirregularities is formed inside the through-hole in order to preventdropout of a filler filled in the through-hole (see, for example,Japanese Patent Application No. 2003-513037 and Japanese PatentApplication No. 2011-528851).

However, even when attempting to prevent dropout of the filler by such atechnique, a gap is generated between the filler and the side wall ofthe through-hole and a gas reservoir may be generated. When heat isapplied to the substrate in this state, in the prior art there is apossibility that gas which has collected into a gas reservoir expandscausing destruction of the through-hole or filler which causes defectssuch as dropout of the filler.

Therefore, the embodiment of the invention has been made in view of suchproblems and provides a through-hole electrode substrate andsemiconductor device which can eliminate defects due to gas collectingin a gas reservoir in a through-hole and allows prevention of dropout ofa filler from within the through-hole.

SUMMARY

According to one embodiment of the embodiment of the invention, athrough-hole electrode substrate is provided including a substrateincluding a through-hole extending from a first aperture of a firstsurface to a second aperture of a second surface, an area of the secondaperture being larger than that of the first aperture, the through-holehaving a minimum aperture part between the first aperture and the secondaperture, wherein an area of the minimum aperture part in a planer viewis smallest among a plurality of areas of the through-hole in a planerview, a filler arranged within the through-hole, and at least one gasdischarge member contacting the filler exposed to one of the firstsurface and the second surface.

According to one embodiment of the embodiment of the invention, athrough-hole electrode substrate is provided including a substrateincluding a through-hole extending from a first aperture of a firstsurface to a second aperture of a second surface, and including a firstpart and a second part, the second part having a larger area in a planarview than the first part and the first aperture, a filler arrangedwithin the through-hole, and a gas discharge member contacting thefiller exposed to one of the first surface and the second surface.

In addition, at least a part of a side wall of the through-hole in across-sectional view may include a curve having an inflection point.

The gas discharge member may be an insulation resin configured todischarge gas within the through-hole to the exterior.

At least a part of the gas discharge member may also be arranged betweena side wall of the through-hole and the filler.

The gas discharge member may include an aperture having an areaincreasing in size in a planar view as the aperture separates from thesubstrate.

A conductive film may be arranged between a side wall of thethrough-hole and the filler.

An insulation film and a conductive film may be arranged in sequencefrom a side wall side of the through-hole between a side wall of thethrough-hole and the filler.

The conductive film may also be arranged on the first surface and on thesecond surface.

The filler may be a conductive material.

The filler may be an insulation material.

The substrate may have insulation properties.

The substrate may have conductive properties.

The gas discharge member may include an aperture overlapping the firstaperture and the second aperture.

The gas discharge member may include an aperture not overlapping thefirst aperture and the second aperture.

The plurality of gas discharge members may be arranged, one of theplurality of gas discharge members is arranged on the first surface andin contact with a first part of the filler exposed to the first surface,one of the plurality of gas discharge members is arranged on the secondsurface and in contact with a second part of the filler exposed to thesecond surface, second part of the filler is larger than an area of thegas discharge member in contact with the first part of the filler.

In addition, according to one embodiment of the embodiment of theinvention, a semiconductor device including a through-hole electrodesubstrate, an LSI substrate and a semiconductor chip.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing a structure of a through-hole electrodesubstrate 100 of the embodiment of the invention related to a firstembodiment;

FIG. 2 is a diagram showing a structure of a through-hole electrodesubstrate 200 of the embodiment of the invention related to a secondembodiment;

FIG. 3 is a diagram showing a structure of a through-hole electrodesubstrate 300 of the embodiment of the invention related to a thirdembodiment;

FIG. 4 is a diagram showing a structure of a through-hole electrodesubstrate 400 of the embodiment of the invention related to a fourthembodiment;

FIG. 5A is a diagram showing a structure of the through-hole electrodesubstrate 100 of the embodiment of the invention related to a fifthembodiment;

FIG. 5B is a diagram showing a structure of the through-hole electrodesubstrate 100 of the embodiment of the invention related to a fifthembodiment;

FIG. 6 is a diagram showing a structure of the through-hole electrodesubstrate 100 of the embodiment of the invention related to a sixthembodiment;

FIG. 7 is a diagram showing a structure of the through-hole electrodesubstrate 100 of the embodiment of the invention related to a seventhembodiment;

FIG. 8A shows an example in which an aperture (via) 110 of a filler 105is misaligned in the through-hole electrode substrate 100 of theembodiment of the invention related to the seventh embodiment;

FIG. 8B shows an example in which an aperture (via) 110 of a filler 105is misaligned in the through-hole electrode substrate 100 of theembodiment of the invention related to the seventh embodiment;

FIG. 9 is a diagram showing a structure of the through-hole electrodesubstrate 300 of the embodiment of the invention related to the seventhembodiment;

FIG. 10 is a diagram showing a structure of the through-hole electrodesubstrate 300 of the embodiment of the invention related to the seventhembodiment;

FIG. 11 is a diagram showing a structure of the through-hole electrodesubstrate 400 of the embodiment of the invention related to the seventhembodiment;

FIG. 12 is a diagram showing a structure of a through-hole electrodesubstrate 1000 of the embodiment of the invention related to an eighthembodiment;

FIG. 13 is a diagram showing a structure of the through-hole electrodesubstrate 1000 of the embodiment of the invention related to the eighthembodiment; and

FIG. 14 is a diagram showing a structure of the through-hole electrodesubstrate 1000 of the embodiment of the invention related to the eighthembodiment.

REFERENCE SIGNS LIST

100, 200, 300, 400: through-hole electrode substrate, 102, 202, 302,402: substrate, 104, 204, 304, 404: through-hole, 105, 205, 305, 405:filler, 106,108, 206, 208, 306, 308, 406, 408: insulation layer, 207,409: conductive film, 307, 407: insulation layer, 110, 112, 210, 212,310, 312, 410, 412: via (aperture)

DESCRIPTION OF EMBODIMENTS

A through-hole electrode substrate of the embodiment of the invention isexplained in detail below while referring to the diagrams. Thethrough-hole electrode substrate of the embodiment of the invention isnot limited to the embodiments below and various modifications arepossible. In all of the embodiments, the same symbols are attached tothe same structural elements and explained.

First Embodiment

The structure of a through-hole electrode substrate 100 of theembodiment of the invention related to the present embodiment isexplained while referring to FIG. 1. FIG. 1 (A) is a planar diagram ofthe through-hole electrode substrate 100 of the embodiment of theinvention related to the present embodiment seen from the upper surface.FIG. 1 (B) is a cross-sectional diagram of the line A˜A′ in FIG. 1 (A).Both FIGS. 1 (A) and (B) show a part of the through-hole electrodesubstrate 100 of the embodiment of the invention related to the presentembodiment for the convenience of explanation.

The through-hole electrode substrate 100 of the embodiment of theinvention related to the present embodiment is arranged with a substrate102, a through-hole 104, a filler 105, insulation layers 106 and 108,and via's 110 and 112. Furthermore, a wiring structure body andelectronic components and the like may also be further mountedrespectively on a first surface 102 a and second surface 102 b side ofthe substrate 102.

In the present embodiment, the substrate 102 includes insulationproperties, for example it is possible to use glass, sapphire or resinand the like. Although there is no particular limitation to thethickness of the substrate 102, it is possible to appropriately set thethickness to a range of 10 μm˜1 mm for example.

The through-hole 104 is a through-hole which passes through a firstaperture 104 a arranged in the first surface 102 a of the substrate anda second aperture 104 b arranged in the second surface 102 b which isthe opposite side surface to the first surface 102 a. The shape of thethrough-hole 104 is not constant and changes from the first aperture 104a towards the second aperture 104 b. In other words, the shape of theside wall of the through-hole 104 is not constant and changes from thefirst aperture 104 a towards the second aperture 104 b. Typically, thesecond aperture 104 b is larger than the first aperture 104 a and thethrough-hole 104 includes a narrow part between the first aperture 104 aand second aperture 104 b. More specifically, the through-hole 104includes a minimum aperture part 104 c having a minimum area M in aplanar view (that is, seen from the upper surface), an inflection point104 d (curved line including the inflection point 104 d) at which a sidewall of the through-hole 104 changes according to a curved line in across-sectional view (that is, seen along the cross-section A˜A′), and amaximum aperture part 104 e having a maximum area L in a planar view(that is, seen from the upper surface). In the present embodiment,although the inflection point 104 d of the through-hole 104 is arrangednearer to the second aperture 104 b than the center of the through-hole104, the present embodiment is not limited to this and the inflectionpoint 104 d of the through-hole 104 may also be arranged nearer to thefirst aperture 104 a than the center of the through-hole 104.Furthermore, it is possible to form the through-hole 104 by performingan etching process, laser process and sandblast process of the substrate102. Although there is no particular limitation to the size of thethrough-hole 104, it is preferred that the size of the maximum aperturepart 104 e is set to 200 μm or less in order to realize a narrow pitch.

The filler 105 is arranged within the through-hole 104. In the presentembodiment, the filler 105 is a material with conductive properties, forexample, a metal deposit such as Cu, a conductive paste including Cu,and a conductive material such as a conductive resin can be used. Anelectrolytic plating filler method is used in the case where a metalsuch as Cu is used as the filler 105. In the case where a conductivepaste having fluidity is used as the filler 105 or a conductive resin isused as the material, it is possible to fill the through-hole 104 with aconductive paste or conductive resin using a spatula or scriber andsubsequently form the filler 105 by performing a heating process or thelike.

The insulation layers 106 and 108 are respectively arranged directly orvia an intermediate layer (not shown in the diagram) above the firstsurface 102 a and second surface 102 b of the substrate 102. Theinsulation layers 106 and 108 are formed from a resin material withinsulation properties such as polyimide or benzocyclobutene for example,and may be an insulator having a gas discharge function. The insulationlayers 106 and 108 work as a gas discharge member by discharging(allowing gas to pass through) gas generated and discharged within thethrough-hole 104 to the exterior. At least one of the insulation layers(gas discharge member) 106 and 108 is arranged so as to contact thefiller 105 exposed to the first surface 102 a and second surface 102 bof the substrate 102. In addition, in the case where a gap existsbetween the side wall of the through-hole 104 and the filler 105, a partof the insulation layers (gas discharge member) 106 and 108 may bearranged between the side wall of the through-hole 104 and the filler105, that is, the insulation layers 106 and 108 may enter between theside wall of the through-hole 104 and the filler 105. The insulationlayers 106 and 108 are formed by a desired patterning usingphotolithography using a photosensitive material with insulationproperties for example.

In the through-hole electrode substrate 100 of the embodiment of theinvention related to the present embodiment, as described above, thethrough-hole 104 includes a minimum aperture part 104 c, inflectionpoint 104 d and maximum aperture part 104 e. In addition, the filler 105is filled into the through-hole 104. In the case shown in FIG. 1, thereis a larger amount of the filler 105 in the part of the through-hole 104on the second surface 102 b side than the part of the through-hole 104on the first surface 102 a side and due to this the amount of gas whichis discharged increases. The area where the gas discharge member 108 ofthe second surface 102 b side contacts the filler 105 increases morethan the area where the gas discharge member 106 of the first surface102 a side contacts the filler 105, and the amount of gas dischargedfrom the gas discharge member 108 of the second surface side may be setto increase. Furthermore, since the second aperture 104 b is larger thanthe first aperture 104 a, it is possible to easily obtain the contactsurface relationship described above by setting the diameter of the via110 and via 112 roughly the same.

The via 110 and via 112 which are apertures, are holes formedrespectively in the insulation layers (gas discharge members) 106 and108. Although not shown in the diagram for the convenience ofexplanation, wiring is formed in the via 110 and 112 by plating orsputtering. This wiring contacts with the filler 105 arranged within thethrough-hole 104 and the wiring conducts with each other. As is shown inFIG. 1 (B), the via 110 and 112 which are apertures in the insulationlayers (gas discharge member) 106 and 108 are formed respectivelyoverlapping a first aperture and a second aperture of the substrate 102.In other words, the via 110 and 112 which are apertures in theinsulation layers (gas discharge member) 106 and 108 are respectivelyarranged directly above the first aperture and second aperture of thesubstrate 102. In addition, a part of the via 110 and/or the via 112which are apertures in the insulation layers (gas discharge member) 106and 108 may be formed so as to overlap the first aperture 104 a andsecond aperture 104 b of the substrate 102 respectively.

In the through-hole electrode substrate 100 of the embodiment of theinvention related to the present embodiment, as described above, thethrough-hole 104 includes a minimum aperture part 104 c, inflectionpoint 104 d and maximum aperture part 104 e. In addition, the filler 105is filled into the through-hole 104. It is possible to secure fillerproperties of the filler by making the size of the first aperture 104 aand second aperture 104 b different. In addition, in the case where aforce is applied to the filler 105 in the direction of the first surface102 a, it is possible to prevent the filler 105 from dropping out of thesubstrate 102 due to the presence of the inflection point 104 d. Inaddition, in the case where a force is applied to the filler 105 in thedirection of the second surface 102 b, it is possible to prevent thefiller 105 from dropping out of the substrate 102 due to the presence ofthe minimum aperture part 104 c. Furthermore, the through-hole electrodesubstrate 100 related to the present embodiment may include both or onlyone of either the minimum aperture part 104 c and maximum aperture part104 e. Therefore, in the through-hole electrode substrate 100 of theembodiment of the invention related to the present embodiment, it ispossible to secure filler properties of the filler 105 and prevent thefiller 105 from dropping in either an upwards or downwards direction.

In addition, in the through-hole electrode substrate 100 of theembodiment of the invention related to the present embodiment, asdescribed above, at least one of the insulation layers (gas dischargemember) 106 and 108 is arranged so as to contact with the filler 105exposed to the first surface 102 a and second surface 102 b of thesubstrate 102. Therefore, it is possible for the insulation layer (gasdischarge member) 106 and/or 108 to discharge gas generated anddischarged within the through-hole 104 to the exterior, remove defectscaused by accumulated gas in a gas reservoir within the through-hole104, it is possible to prevent the filler 105 from dropping out from thethrough-hole 104, and it is possible to provide a through-hole electrodesubstrate with a high level of reliability.

Furthermore, although it preferred that there is no gap between the sidewall of the through-hole 104 and the filler 105, a slight gap orinterval may be produced between the side wall of the through-hole 104and the filler 105. Even in the case where this type of gap or intervalis produced, it is possible to prevent the filler 105 from dropping outin the through-hole electrode substrate 100 of the embodiment of theinvention related to the present embodiment.

Second Embodiment

The structure of a through-hole electrode substrate 200 of theembodiment of the invention related to the present embodiment isexplained while referring to FIG. 2. FIG. 2 (A) is a planar diagram ofthe through-hole electrode substrate 200 of the embodiment of theinvention related to the present embodiment seen from the upper surface.FIG. 2 (B) is a cross-sectional diagram of the line A˜A′ in FIG. 2 (A).Both FIGS. 2 (A) and (B) show a part of the through-hole electrodesubstrate 200 of the embodiment of the invention related to the presentembodiment for the convenience of explanation.

The through-hole electrode substrate 200 of the embodiment of theinvention related to the present embodiment is arranged with a substrate202, a through-hole 204, a filler 205, insulation layers 206 and 208,and via's 210 and 212. Furthermore, a wiring structure body andelectronic components and the like may also be further mountedrespectively on a first surface 202 a and second surface 202 b side ofthe substrate 202.

In the present embodiment, the substrate 202 includes insulationproperties, for example it is possible to use glass, sapphire or resinand the like. Although there is no particular limitation to thethickness of the substrate 202, it is possible to appropriately set thethickness to a range of 10 μm˜1 mm for example.

The through-hole 204 is a through-hole which passes through a firstaperture 204 a arranged in the first surface 202 a of the substrate 202and a second aperture 204 b arranged in the second surface 202 b whichis the opposite side surface to the first surface 202 a. The shape ofthe through-hole 204 is not constant and changes from the first aperture204 a towards the second aperture 204 b the same as in the firstembodiment described above. In other words, the shape of the side wallof the through-hole 204 is not constant and changes from the firstaperture 204 a towards the second aperture 204 b. Typically, the secondaperture 204 b is larger than the first aperture 204 a and thethrough-hole 204 includes a narrow part between the first aperture 204 aand second aperture 204 b. More specifically, the through-hole 204includes a minimum aperture part 204 c having a minimum area M in aplanar view (that is, seen from the upper surface), an inflection point204 d (curved line including the inflection point 204 d) at which a sidewall of the through-hole 204 changes according to a curved line in across-sectional view (that is, seen along the cross-section A˜A′), and amaximum aperture part 204 e having a maximum area L in a planar view(that is, seen from the upper surface). In the present embodiment,although the inflection point 204 d of the through-hole 204 is arrangednearer to the second aperture 204 b than the center of the through-hole204, the present embodiment is not limited to this and the inflectionpoint 204 d of the through-hole 204 may also be arranged nearer to thefirst aperture 204 a than the center of the through-hole 204.Furthermore, it is possible to form the through-hole 204 by performingan etching process, laser process and sandblast process of the substrate202. Although there is no particular limitation to the size of thethrough-hole 204, it is preferred that the size of the maximum aperturepart 204 e is set to 200 μm or less in order to realize a narrow pitch.

A conductive film 207 and the filler 205 are arranged within thethrough-hole 204. The conductive film 207 is arranged on the side wallside of the through-hole 204 and a part of the conductive film 207 isarranged on an upper part of the first surface 202 a and second surface202 b. In the present embodiment, the filler 205 is a material withinsulation properties, for example, an organic material such aspolyimide or benzocyclobutene or an inorganic material such as siliconoxide or silicon nitride is used. The conductive film 207 can be formedusing a plating method or CVD method for example. The filler 205 can beformed using a method such as absorption or pushing method.

The insulation layers 206 and 208 are respectively arranged directly orvia an intermediate layer (not shown in the diagram) above the firstsurface 202 a and second surface 202 b of the substrate 202. Theinsulation layers 206 and 208 are formed from a resin material withinsulation properties such as polyimide or benzocyclobutene for example,and may be an insulator having a gas discharge function. The insulationlayers 206 and 208 work as a gas discharge member by discharging(allowing gas to pass through) gas generated and discharged within thethrough-hole 204 to the exterior. In the present embodiment, theinsulation layers (gas discharge member) 206 and 208 are arranged so asto cover and contact the filler 205 which is exposed to the firstsurface 202 a and second surface 202 b of the substrate 202. At leastone of the insulation layers (gas discharge member) 206 and 208 isarranged so as to contact the filler 205 exposed to the first surface202 a and second surface 202 b of the substrate 202. In addition, in thecase where a gap exists between the side wall of the through-hole 204and the filler 205, a part of the insulation layers (gas dischargemember) 206 and 208 may be arranged between the side wall of thethrough-hole 204 and the filler 205, that is, the insulation layers 206and 208 may enter between the side wall of the through-hole 204 and thefiller 205. The insulation layers 206 and 208 are formed by a desiredpatterning using photolithography using a photosensitive material withinsulation properties for example.

In the through-hole electrode substrate 200 of the embodiment of theinvention related to the present embodiment, as described above, thethrough-hole 204 includes a minimum aperture part 204 c, inflectionpoint 204 d and maximum aperture part 204 e. In addition, the filler 205is filled into the through-hole 204. In the case shown in FIG. 2, thereis a larger amount of the filler 205 in the part of the through-hole 204on the second surface 202 b side than the part of the through-hole 204on the first surface 202 a side and due to this the amount of gas whichis discharged increases. Therefore, the area where the gas dischargemember 208 of the second surface 202 b side contacts the filler 205increases more than the area where the gas discharge member 206 of thefirst surface 202 a side contacts the filler 205, and the amount of gasdischarged from the gas discharge member 208 of the second surface sidemay be set to increase.

The via 210 and via 212 which are apertures, are holes formedrespectively in the insulation layers (gas discharge members) 206 and208 above the conductive film 207 above the first surface 202 a andsecond surface 202 b. Although not shown in the diagram for theconvenience of explanation, wiring is formed in the via 210 and 212 byplating or sputtering. This wiring contacts with the conductive film 207above the first surface 202 a and above the second surface 202 b and thewiring conducts with each other. In addition, a part of the via 210and/or the via 212 which are apertures in the insulation layers (gasdischarge member) 206 and 208 may be formed so as to overlap the firstaperture 204 a and second aperture 204 b of the substrate 202respectively.

In the through-hole electrode substrate 200 of the embodiment of theinvention related to the present embodiment, as described above, thethrough-hole 204 includes a minimum aperture part 204 c, inflectionpoint 204 d and maximum aperture part 204 e. In addition, the filler 205is filled into the through-hole 204. It is possible to secure fillerproperties of the filler by making the size of the first aperture 204 aand second aperture 204 b different. In addition, in the case where aforce is applied to the filler 205 in the direction of the first surface202 a, it is possible to prevent the filler 205 from dropping out of thesubstrate 202 due to the presence of the inflection point 204 d. Inaddition, in the case where a force is applied to the filler 205 in thedirection of the second surface 202 b, it is possible to prevent thefiller 205 from dropping out of the substrate 202 due to the presence ofthe minimum aperture part 204 c. Furthermore, the through-hole electrodesubstrate 200 related to the present embodiment may include both or onlyone of either the minimum aperture part 204 c and maximum aperture part204 e. Therefore, in the through-hole electrode substrate 200 of theembodiment of the invention related to the present embodiment, it ispossible to secure filler properties of the filler 205 and prevent thefiller 205 from dropping in either an upwards or downwards direction.

In addition, in the through-hole electrode substrate 200 of theembodiment of the invention related to the present embodiment, asdescribed above, at least one of the insulation layers (gas dischargemember) 206 and 208 is arranged so as to contact with the filler 205exposed to the first surface 202 a and second surface 202 b of thesubstrate 202. Therefore, it is possible for the insulation layer (gasdischarge member) 206 and/or 208 to discharge gas generated anddischarged within the through-hole 204 to the exterior, remove defectscaused by accumulated gas in a gas reservoir within the through-hole204, it is possible to prevent the filler 205 from dropping out from thethrough-hole 204, and it is possible to provide a through-hole electrodesubstrate with a high level of reliability.

Furthermore, although it preferred that there is no gap between theconductive film 207 arranged in the side wall of the through-hole 204and the filler 205, a slight gap or interval may be produced betweenconductive film 207 and the filler 205. Even in the case where this typeof gap or interval is produced, it is possible to prevent the filler 205from dropping out in the through-hole electrode substrate 200 of theembodiment of the invention related to the present embodiment.

Third Embodiment

The structure of a through-hole electrode substrate 300 of theembodiment of the invention related to the present embodiment isexplained while referring to FIG. 3. FIG. 3 (A) is a planar diagram ofthe through-hole electrode substrate 300 of the embodiment of theinvention related to the present embodiment seen from the upper surface.FIG. 3 (B) is a cross-sectional diagram of the line A˜A′ in FIG. 3 (A).Both FIGS. 3 (A) and (B) show a part of the through-hole electrodesubstrate 300 of the embodiment of the invention related to the presentembodiment for the convenience of explanation.

The through-hole electrode substrate 300 of the embodiment of theinvention related to the present embodiment is arranged with a substrate302, a through-hole 304, a filler 305, insulation layers 306 and 308,and via's 310 and 312. Furthermore, a wiring structure body andelectronic components and the like may also be further mountedrespectively on a first surface 302 a and second surface 302 b side ofthe substrate 302.

In the present embodiment, the substrate 302 includes conductiveproperties, for example it is possible to use a silicon semiconductor ormetal such as stainless steel and the like. Although there is noparticular limitation to the thickness of the substrate 302, it ispossible to appropriately set the thickness to a range of 10 μm˜1 mm forexample.

The through-hole 304 is a through-hole which passes through a firstaperture 304 a arranged in the first surface 302 a of the substrate 302and a second aperture 304 b arranged in the second surface 302 b whichis the opposite side surface to the first surface 302 a the same as inthe first and second embodiments described above. The shape of thethrough-hole 304 is not constant and changes from the first aperture 304a towards the second aperture 304 b. In other words, the shape of theside wall of the through-hole 304 is not constant and changes from thefirst aperture 304 a towards the second aperture 304 b. Typically, thesecond aperture 304 b is larger than the first aperture 304 a and thethrough-hole 304 includes a narrow part between the first aperture 304 aand second aperture 304 b. More specifically, the through-hole 304includes a minimum aperture part 304 c having a minimum area M in aplanar view (that is, seen from the upper surface), an inflection point304 d (curved line including the inflection point 304 d) at which a sidewall of the through-hole 304 changes according to a curved line in across-sectional view (that is, seen along the cross-section A˜A′), and amaximum aperture part 304 e having a maximum area L in a planar view(that is, seen from the upper surface). In the present embodiment,although the inflection point 304 d of the through-hole 304 is arrangednearer to the second aperture 304 b than the center of the through-hole304, the present embodiment is not limited to this and the inflectionpoint 304 d of the through-hole 304 may also be arranged nearer to thefirst aperture 304 a than the center of the through-hole 304.Furthermore, it is possible to form the through-hole 304 by performingan etching process, laser process and sandblast process of the substrate302. Although there is no particular limitation to the size of thethrough-hole 304, it is preferred that the size of the maximum aperturepart 304 e is set to 200 μm or less in order to realize a narrow pitch.

The insulation layer 307 and the filler 305 are arranged within thethrough-hole 304. The insulation layer 307 is arranged on the side wallside of the through-hole 304 and a part of the insulation layer 307 isarranged on an upper part of the first surface and second surface of thesubstrate 302. In the present embodiment, the filler 305 is a materialwith conductive properties, for example, a metal deposit such as Cu, aconductive paste including Cu, and a conductive material such as aconductive resin can be used. An electrolytic plating filler method isused in the case where a metal such as Cu is used as the filler 305. Inthe case where a conductive paste having fluidity is used as the filler305 or a conductive resin is used as the material, it is possible tofill the through-hole 304 with a conductive paste or conductive resinusing a spatula or scriber and subsequently form the filler 305 byperforming a heating process or the like.

The insulation layers 306 and 308 are respectively arranged directly orvia an intermediate layer (not shown in the diagram) above the firstsurface 302 a and second surface 302 b of the substrate 302. Theinsulation layers 306 and 308 are formed from a resin material withinsulation properties such as polyimide or benzocyclobutene for example,and may be an insulator having a gas discharge function. The insulationlayers 306 and 308 work as a gas discharge member by discharging(allowing gas to pass through) gas generated and discharged within thethrough-hole 304 to the exterior. At least one of the insulation layers(gas discharge member) 306 and 308 is arranged so as to contact thefiller 305 exposed to the first surface and second surface of thesubstrate 302. In addition, in the case where a gap exists between theside wall of the through-hole 304 and the filler 305, a part of theinsulation layers (gas discharge member) 306 and 308 may be arrangedbetween the side wall of the through-hole 304 and the filler 305, thatis, the insulation layers 306 and 308 may enter between the side wall ofthe through-hole 304 and the filler 305. The insulation layers 306 and308 are formed by a desired patterning using photolithography using aphotosensitive material with insulation properties for example.

In the through-hole electrode substrate 300 of the embodiment of theinvention related to the present embodiment, as described above, thethrough-hole 304 includes a minimum aperture part 304 c, inflectionpoint 304 d and maximum aperture part 304 e. In addition, the filler 305is filled into the through-hole 304. In the case shown in FIG. 3, thereis a larger amount of the filler 305 in the part of the through-hole 304on the second surface 302 b side than the part of the through-hole 304on the first surface 302 a side and due to this the amount of gas whichis discharged increases. Therefore, the area where the gas dischargemember 308 of the second surface side contacts the filler 305 increasesmore than the area where the gas discharge member 306 of the firstsurface 302 a side contacts the filler 305, and the amount of gasdischarged from the gas discharge member 308 of the second surface 302 bside may be set to increase. Furthermore, since the second aperture 304b is larger than the first aperture 304 a, it is possible to easilyobtain the contact surface relationship described above by setting thediameter of the via 310 and via 312 roughly the same.

The via 310 and via 312 which are apertures, are holes formedrespectively in the insulation layers (gas discharge members) 306 and308. Although not shown in the diagram for the convenience ofexplanation, wiring is formed in the via 310 and 312 by plating orsputtering. This wiring contacts with the filler 305 arranged within thethrough-hole 304 and the wiring conducts with each other. As is shown inFIG. 3 (B), the via 310 and 312 which are apertures in the insulationlayers (gas discharge member) 306 and 308 are formed respectivelyoverlapping the first aperture 304 a and the second aperture 304 b ofthe substrate 302. In other words, the via 310 and 312 which areapertures in the insulation layers (gas discharge member) 306 and 308are respectively arranged directly above the first aperture 304 a andsecond aperture 304 b of the substrate 302. In addition, a part of thevia 310 and/or the via 312 which are apertures in the insulation layers(gas discharge member) 306 and 308 may be formed so as to overlap thefirst aperture 304 a and second aperture 304 b of the substrate 302respectively.

In the through-hole electrode substrate 300 of the embodiment of theinvention related to the present embodiment, as described above, thethrough-hole 304 includes a minimum aperture part 304 c, inflectionpoint 304 d and maximum aperture part 304 e. In addition, the filler 305is filled into the through-hole 304. It is possible to secure fillerproperties of the filler by making the size of the first aperture 304 aand second aperture 304 b different. In addition, in the case where aforce is applied to the filler 305 in the direction of the first surface302 a, it is possible to prevent the filler 305 from dropping out of thesubstrate 302 due to the presence of the inflection point 304 d. Inaddition, in the case where a force is applied to the filler 305 in thedirection of the second surface 302 b, it is possible to prevent thefiller 305 from dropping out of the substrate 302 due to the presence ofthe minimum aperture part 304 c. Furthermore, the through-hole electrodesubstrate 300 related to the present embodiment may include both or onlyone of either the minimum aperture part 304 c and maximum aperture part304 e. Therefore, in the through-hole electrode substrate 300 of theembodiment of the invention related to the present embodiment, it ispossible to secure filler properties of the filler 305 and prevent thefiller 305 from dropping in either an upwards or downwards direction.

In addition, in the through-hole electrode substrate 300 of theembodiment of the invention related to the present embodiment, asdescribed above, at least one of the insulation layers (gas dischargemember) 306 and 308 is arranged so as to contact with the filler 305exposed to the first surface 302 a and second surface 302 b of thesubstrate 302. Therefore, it is possible for the insulation layer (gasdischarge member) 306 and/or 308 to discharge gas generated anddischarged within the through-hole 304 to the exterior, remove defectscaused by accumulated gas in a gas reservoir within the through-hole304, it is possible to prevent the filler 305 from dropping out from thethrough-hole 304, and it is possible to provide a through-hole electrodesubstrate with a high level of reliability.

Furthermore, although it preferred that there is no gap between theinsulation layer 307 arranged in the side wall of the through-hole 304and the filler 305, a slight gap or interval may be produced between theinsulation layer 307 and the filler 305. Even in the case where thistype of gap or interval is produced, it is possible to prevent thefiller 305 from dropping out in the through-hole electrode substrate 300of the embodiment of the invention related to the present embodiment.

Fourth Embodiment

The structure of a through-hole electrode substrate 400 of theembodiment of the invention related to the present embodiment isexplained while referring to FIG. 4. FIG. 4 (A) is a planar diagram ofthe through-hole electrode substrate 400 of the embodiment of theinvention related to the present embodiment seen from the upper surface.FIG. 4 (B) is a cross-sectional diagram of the line A˜A′ in FIG. 4 (A).Both FIGS. 4 (A) and (B) show a part of the through-hole electrodesubstrate 400 of the embodiment of the invention related to the presentembodiment for the convenience of explanation.

The through-hole electrode substrate 400 of the embodiment of theinvention related to the present embodiment is arranged with a substrate402, a through-hole 404, a filler 405, insulation layers 406 and 408,insulation film 407, a conductive film 409, and via's 410 and 412.Furthermore, a wiring structure body and electronic components and thelike may also be further mounted respectively on a first surface 402 aand second surface 402 b side of the substrate 402.

In the present embodiment, the substrate 402 includes conductiveproperties, for example it is possible to use a silicon semiconductor ormetal such as stainless steel and the like. Although there is noparticular limitation to the thickness of the substrate 402, it ispossible to appropriately set the thickness to a range of 10 μm˜1 mm forexample.

The through-hole 404 is a through-hole which passes through a firstaperture 404 a arranged in the first surface 402 a of the substrate 402and a second aperture 404 b arranged in the second surface 402 b whichis the opposite side surface to the first surface 402 a. The shape ofthe through-hole 404 is not constant and changes from the first aperture404 a towards the second aperture 404 b the same as the first to thirdembodiments described above. In other words, the shape of the side wallof the through-hole 404 is not constant and changes from the firstaperture 404 a towards the second aperture 404 b. Typically, the secondaperture 404 b is larger than the first aperture 404 a and thethrough-hole 404 includes a narrow part between the first aperture 404 aand second aperture 404 b. More specifically, the through-hole 404includes a minimum aperture part 404 c having a minimum area M in aplanar view (that is, seen from the upper surface), an inflection point404 d (curved line including the inflection point 404 d) at which a sidewall of the through-hole 404 changes according to a curved line in across-sectional view (that is, seen along the cross-section A˜A′), and amaximum aperture part 404 e having a maximum area L in a planar view(that is, seen from the upper surface). In the present embodiment,although the inflection point 404 d of the through-hole 404 is arrangednearer to the second aperture 404 b than the center of the through-hole404, the present embodiment is not limited to this and the inflectionpoint 404 d of the through-hole 404 may also be arranged nearer to thefirst aperture 404 a than the center of the through-hole 404.Furthermore, it is possible to form the through-hole 404 by performingan etching process, laser process and sandblast process of the substrate402. Although there is no particular limitation to the size of thethrough-hole 404, it is preferred that the size of the maximum aperturepart 404 e is set to 200 μm or less in order to realize a narrow pitch.

An insulation layer 407, conductive film 409 and the filler 405 arearranged within the through-hole 404. The insulation layer 407 isarranged on the side wall side of the through-hole 404, and a part ofthe insulation layer 407 is arranged on an upper part of the firstsurface and second surface of the substrate 402. The conductive film 409is arranged on the insulation layer 407 side of the through-hole 404 anda part of the conductive film 409 is arranged on an upper part of thefirst surface and second surface of the substrate 402. In the presentembodiment, the filler 405 is a material with insulation properties, forexample, an organic material such as polyimide or benzocyclobutene or aninorganic material such as silicon oxide or silicon nitride is used. Theconductive film 409 can be formed using a plating method or CVD methodfor example. The filler 405 can be formed using a method such asabsorption or pushing method.

The insulation layers 406 and 408 are respectively arranged directly orvia an intermediate layer (not shown in the diagram) above the firstsurface 402 a and second surface 402 b of the substrate 402. Theinsulation layers 406 and 408 are formed from a resin material withinsulation properties such as polyimide and may be an insulator having agas discharge function. The insulation layers 406 and 408 work as a gasdischarge member by discharging (allowing gas to pass through) gasgenerated and discharged within the through-hole 404 to the exterior. Inthe present embodiment, the insulation layers (gas discharge member) 406and 408 are arranged to cover and contact the filler 405 exposed to thefirst surface and second surface of the substrate 402. At least one ofthe insulation layers (gas discharge member) 406 and 408 is arranged soas to contact the filler 405 exposed to the first surface 402 a andsecond surface 402 b of the substrate 402. In addition, in the casewhere a gap exists between the side wall of the through-hole 404 and thefiller 405, a part of the insulation layers (gas discharge member) 406and 408 may be arranged between the side wall of the through-hole 404and/or the insulation layer 407 and the filler 405, that is, theinsulation layers 406 and 408 may enter between the side wall of thethrough-hole 404 and the filler 405. The insulation layers 406 and 408are formed by a desired patterning using photolithography using aphotosensitive material with insulation properties for example.

In the through-hole electrode substrate 400 of the embodiment of theinvention related to the present embodiment, as described above, thethrough-hole 404 includes a minimum aperture part 404 c, inflectionpoint 404 d and maximum aperture part 404 e. In addition, the filler 405is filled into the through-hole 404. In the case shown in FIG. 4, thereis a larger amount of the filler 405 in the part of the through-hole 404on the second surface 402 b side than the part of the through-hole 404on the first surface 402 a side and due to this the amount of gas whichis discharged increases. Therefore, the area where the gas dischargemember 408 of the second surface 402 b side contacts the filler 405increases more than the area where the gas discharge member 406 of thefirst surface 402 a side contacts the filler 405, and the amount of gasdischarged from the gas discharge member 408 of the second surface sidemay be set to increase. Furthermore, since the second aperture 404 b islarger than the first aperture 404 a, it is possible to easily obtainthe contact surface relationship described above by setting the diameterof the via 410 and via 412 roughly the same.

The via 410 and via 412 which are apertures, are holes formedrespectively in the insulation layers (gas discharge members) 406 and408 above the conductive film 409 above the first surface and secondsurface. Although not shown in the diagram for the convenience ofexplanation, wiring is formed in the via 410 and 412 by plating orsputtering. This wiring contacts with the conductive film 409 above thefirst surface 402 a and above the second surface 402 b and the wiringconducts with each other. In addition, a part of the via 410 and/or thevia 412 which are apertures in the insulation layers (gas dischargemember) 406 and 408 may be formed so as to overlap the first aperture404 a and second aperture 404 b of the substrate 402 respectively.

In the through-hole electrode substrate 400 of the embodiment of theinvention related to the present embodiment, as described above, thethrough-hole 404 includes a minimum aperture part 404 c, inflectionpoint 404 d and maximum aperture part 404 e. In addition, the filler 405is filled into the through-hole 404. It is possible to secure fillerproperties of the filler by making the size of the first aperture 404 aand second aperture 404 b different. In addition, in the case where aforce is applied to the filler 405 in the direction of the first surface402 a, it is possible to prevent the filler 405 from dropping out of thesubstrate 402 due to the presence of the inflection point 404 d. Inaddition, in the case where a force is applied to the filler 405 in thedirection of the second surface, it is possible to prevent the filler405 from dropping out of the substrate 402 due to the presence of theminimum aperture part 404 c. Furthermore, the through-hole electrodesubstrate 400 related to the present embodiment may include both or onlyone of either the minimum aperture part 404 c and maximum aperture part404 e. Therefore, in the through-hole electrode substrate 400 of theembodiment of the invention related to the present embodiment, it ispossible to secure filler properties of the filler 405 and prevent thefiller 405 from dropping in either an upwards or downwards direction.

In addition, in the through-hole electrode substrate 400 of theembodiment of the invention related to the present embodiment, asdescribed above, at least one of the insulation layers (gas dischargemember) 406 and 408 is arranged so as to contact with the filler 405exposed to the first surface 402 a and second surface 402 b of thesubstrate 402. Therefore, it is possible for the insulation layer (gasdischarge member) 406 and/or 408 to discharge gas generated anddischarged within the through-hole 404 to the exterior, remove defectscaused by accumulated gas in a gas reservoir within the through-hole404, it is possible to prevent the filler 405 from dropping out from thethrough-hole 404, and it is possible to provide a through-hole electrodesubstrate with a high level of reliability.

Furthermore, although it preferred that there is no gap between theconductive film 409 arranged in the through-hole 404 and the filler 405,a slight gap or interval may be produced between the conductive film 409and the filler 405. Even in the case where this type of gap or intervalis produced, it is possible to prevent the filler 405 from dropping outin the through-hole electrode substrate 400 of the embodiment of theinvention related to the present embodiment.

Fifth Embodiment

FIG. 5A is a cross-sectional diagram of the through-hole electrodesubstrate 100 of the embodiment of the invention related to the presentembodiment. In addition, FIG. 5B is an expanded view diagram of the part104 f in FIG. 5A. Furthermore, both FIG. 5A and FIG. 5B show a part ofthe through-hole electrode substrate 100 of the embodiment of theinvention related to the present embodiment for the convenience ofexplanation.

As is shown in FIG. 5A, the through-hole electrode substrate 100 of theembodiment of the invention related to the present embodiment includes aconnection part 104 f with a first surface of the first aperture 101 aof the through-hole 104 and the connection part 104 f has a curvedsurface. In addition, a connection part 104 g with a first surface ofthe first aperture 101 a of the through-hole 104 has a curved surface.Since the remaining structure is the same as in the first embodiment, anexplanation is omitted.

Since the connection part 104 f and connection part 104 g of thethrough-hole 104 in the through-hole electrode substrate 100 of theembodiment of the invention related to the present embodiment include acurved surface, it is possible to easily fill the filler 405.

In addition, by providing a connection part with a first surface of afirst aperture of a through-hole with a curved surface and by providinga connection part of a second surface of a second aperture of athrough-hole with a curved surface, it is possible to adopt the samestructure as the present embodiment in the first to fourth embodimentsdescribed above.

Sixth Embodiment

The structure of the through-hole electrode substrate 100 of theembodiment of the invention related to the sixth embodiment is explainedwhile referring to FIG. 6. FIG. 6 (A) is a planar diagram of thethrough-hole electrode substrate 100 of the embodiment of the inventionrelated to the present embodiment seen from the upper surface. FIG. 6(B) is a cross-sectional diagram of the line A˜A′ in FIG. 6 (A). BothFIGS. 6 (A) and (B) show a part of the through-hole electrode substrate100 of the embodiment of the invention related to the present embodimentfor the convenience of explanation.

As is shown in FIG. 5 (A), the through-hole electrode substrate 100 ofthe embodiment of the invention related to the present embodiment isarranged with the inflection point 104 d of the through hole 104 nearerto the first aperture 104 a than the center of the through-hole 104.Since the remaining structure is the same as in the first embodiment, anexplanation is omitted.

In addition, by arranging an inflection point of a through-hole nearer afirst aperture than the center of the through-hole, it is possible toadopt the same structure as the present embodiment in the first to fifthembodiments described above.

Seventh Embodiment

The structure of the through-hole electrode substrate 100 of theembodiment of the invention related to the seventh embodiment isexplained while referring to FIG. 7. FIG. 7 (A) is a planar diagram ofthe through-hole electrode substrate 100 of the embodiment of theinvention related to the present embodiment seen from the upper surface.FIG. 7 (B) is a cross-sectional diagram of the line A˜A′ in FIG. 7 (A).Both FIGS. 7 (A) and (B) show a part of the through-hole electrodesubstrate 100 of the embodiment of the invention related to the presentembodiment for the convenience of explanation.

As is shown in FIG. 7 (A), in the through-hole electrode substrate 100of the embodiment of the invention related to the present embodiment theapertures (via's) 110 and 112 of the gas discharge member 106 and 108are arranged so that the area seen from a planar view (that is, see froman upper surface) becomes larger as they separate from the substrate 102side. In other words, in a cross-sectional view (that is, seen along thecross-section A˜A′), an angle α formed between the gas discharge member106 and 108 and the filler 105 is about 45 degrees˜89 degrees. Since theremaining structure is the same as in the first embodiment, anexplanation is omitted. Although the insulation layers 106 and 108 areformed by a desired patterning using photolithography using aphotosensitive material with insulation properties for example, theapertures (via's) 110 and 112 of the gas discharge members 106 and 108can be formed so that the area seen from a planar view becomes larger asthey separate from the substrate 102 side by adjusting the exposureconditions.

In the through-hole electrode substrate 100 of the embodiment of theinvention related to the present embodiment, it is possible to preventstep-cut of wiring arranged in an aperture (via) by providing thestructure described above.

In addition, a roughly planar view of the through-hole electrodesubstrate 100 of the embodiment of the invention related to the presentembodiment is shown in FIG. 8A and FIG. 8B. In the present embodiment,the apertures (via's) 110 and 112 of the gas discharge member 106 and108 are arranged so that the area seen from a planar view (that is, seefrom an upper surface) becomes larger as they separate from thesubstrate 102 side, and since it is possible to reduce the area of theapertures (via's) 110 and 112 above the filler 105 and secure a contactbetween the apertures (via's) 110 and 112 and the filler 105, it ispossible to reduce the possibility of contact defects due tomisalignment when forming the apertures (via's) 110 and 112.

For example, FIG. 8A shows the case where the aperture (via) 110 abovethe filler 105 is misaligned on the right side. In addition, FIG. 8Bshows the case where the aperture (via) 110 above the filler 105 ismisaligned on the right side and a part of the aperture (via) 110becomes separated from above the filler 105. In both cases shown in FIG.8A and FIG. 8B, since it is possible to secure a contact between theapertures (via′) 110 and 112 and the filler 105, it is possible toreduce the possibility of contact defects due to misalignment of theapertures (via's) 110 and 112.

In addition, as is shown in FIG. 9-11, it is possible to adopt the samestructure as the present embodiment in the first to fourth embodimentsdescribed above as explained below.

As is shown in FIG. 9 (A), in the through-hole electrode substrate 200of the embodiment of the invention related to the present embodiment,the apertures (via's) 210 and 212 of the gas discharge members 206 and208 are arranged so that the area seen from a planar view (that is, seefrom an upper surface) becomes larger as they separate from thesubstrate 202 side. In other words, in a cross-sectional view (that is,seen along the cross-section A˜A′), an angle α formed between the gasdischarge members 206 and 208 and the filler 205 is about 45 degrees 89degrees. Since the remaining structure is the same as in the secondembodiment, an explanation is omitted.

As is shown in FIG. 10 (A), in the through-hole electrode substrate 300of the embodiment of the invention related to the present embodiment,the apertures (via's) 310 and 312 of the gas discharge members 306 and308 are arranged so that the area seen from a planar view (that is, seefrom an upper surface) becomes larger as they separate from thesubstrate 302 side. In other words, in a cross-sectional view (that is,seen along the cross-section A˜A′), an angle α formed between the gasdischarge members 306 and 308 and the filler 305 is about 45 degrees 89degrees. Since the remaining structure is the same as in the thirdembodiment, an explanation is omitted.

As is shown in FIG. 11 (A), in the through-hole electrode substrate 400of the embodiment of the invention related to the present embodiment,the apertures (via's) 410 and 412 of the gas discharge members 406 and408 are arranged so that the area seen from a planar view (that is, seefrom an upper surface) becomes larger as they separate from thesubstrate 402 side. In other words, in a cross-sectional view (that is,seen along the cross-section A˜A′), an angle α formed between the gasdischarge members 406 and 408 and the filler 405 is about 45 degrees 89degrees. Since the remaining structure is the same as in the fourthembodiment, an explanation is omitted.

As explained above, since it is possible to reduce the area of anaperture (via) above a filler and secure a contact between the apertures(via) and the filler, it is also possible to reduce the possibility ofcontact defects due to misalignment when forming the aperture (via) inany of the structures of the present embodiment.

Eighth Embodiment

The structure of a semiconductor device 1000 of the embodiment of theinvention related to the eighth embodiment is explained while referringto FIG. 12-14. In the present embodiment, a semiconductor device 1000using the through-hole electrode substrates in the first to seventhembodiments described above is explained.

FIG. 12 shows a semiconductor device 1000 related to the presentembodiment. The semiconductor device 1000 is stacked with threethrough-hole electrode substrates 100 related to the embodiment of theinvention and is connected to a LSI substrate (semiconductor substrate)500. The LSI substrate 500 is arranged with a wiring layer 502.Semiconductor elements such as a DRAM for example are arranged above thethrough-hole electrode substrate 100. A wiring layer 120 is arranged inthe through-hole electrode substrate 100. As is shown in FIG. 12, thewiring layer 502 of the LSI substrate 500 and the wiring layer 120 ofthe through-hole electrode substrate 100 are connected via a bump 1002.A metal such as indium, copper or gold for example is used for the bump1002. In addition, as is shown in FIG. 12, the wiring layer 120 of thethrough-hole electrode substrate 100 is connected with the wiring layer120 of a different through-hole electrode substrate 100 via the bump1002.

Furthermore, the embodiment of the invention is not limited to threelayers in the case where the through-hole electrode substrates 100 arestacked, two layers or four layers are also possible. In addition, theembodiment of the invention is not limited to using a bump in theconnection between the through-hole electrode substrate 100 and anothersubstrate, eutectic bonding or another bonding technology may also beused. In addition, the through-hole electrode substrate 100 and anothersubstrate may be adhered together by coating polyimide or an epoxy resinand sintering.

FIG. 13 shows another example of the semiconductor device 1000 of theembodiment of the invention related to present embodiment. Thesemiconductor device 1000 shown in FIG. 13 is stacked with asemiconductor chip (LSI chip) 600 and 602 such as a MEMS device, CPU,memory or IC, and the through-hole electrode substrate 100, and isconnected to a LSI substrate 500

The through-hole electrode substrate 100 is arranged between thesemiconductor chip 600 and the semiconductor chip 602 and both areconnected via a bump 1002. The semiconductor chip 600 is mounted abovethe LSI substrate 500 and the LSI substrate 500 and the semiconductorchip 602 are connected via a wire 604. In the present example, thethrough-hole electrode substrate 100 is used as an interposer forthree-dimensional mounting by stacking a plurality of semiconductorchips, and by stacking a plurality of semiconductor chips each with adifferent function it is possible to form a multi-functionalsemiconductor device. For example, by forming the semiconductor chip 600into a tri-axial acceleration sensor and the semiconductor chip 602 intoa bi-axial magnetic sensor, it is possible to realize a semiconductordevice in which a five-axis motion sensor is realized using one module.

In the case where a semiconductor chip is a sensor formed using a MEMSdevice, the sensing results are sometimes output using an analog signal.In this case, a low pass filter or amplifier and the like may be formedin the semiconductor chip 600, 602 or through-hole electrode substrate100.

FIG. 14 shows another example of the semiconductor device 1000 relatedto the present embodiment. Although the two examples (FIG. 12, FIG. 13)described above were three-dimensional mounting, the present exampleapplies the through-hole electrode substrate 100 to a two dimensionaland three dimensional combined mounting. In the example shown in FIG.14, six through-hole electrode substrates 100 are stacked and connectedto the LSI substrate 500. However, not only are all the through-holeelectrode substrates 100 stacked but are also arranged aligned in asubstrate in-plane direction.

In the example in FIG. 14, two through-hole electrode substrates 100 areconnected above the LSI substrate 500, a further through-hole electrodesubstrate 100 is arranged above the two through-hole electrodesubstrates 100, and a further through-hole electrode substrate 100 isarranged above. Furthermore, as in the example shown in FIG. 13, twodimensional and three dimensional combined mounting is possible evenwhen the through-hole electrode substrate 100 is used as an interposeror connecting a plurality of semiconductor chips. For example, severalthrough-hole electrode substrates 100 may be replaced for asemiconductor chip.

In addition, although an example in which the through-hole electrodesubstrate 100 of the embodiment of the invention related to the firstembodiment is used as a through-hole electrode substrate in the examplesin FIG. 12-14, the embodiment of the invention is not limited to thisand the through-hole electrode substrates 200, 300 and/or 400 of theembodiment of the invention related to the other embodiments may also beused.

The semiconductor device 1000 of the embodiment of the invention relatedto the present embodiment is mounted in various electronic devices forexample in a mobile terminal (mobile phone, smartphone and note typepersonal computer and the like), a data processing device (desktop typepersonal computer, server, car navigation and the like) and householdappliances and the like.

According to the embodiment of the invention, it is possible to providea through-hole electrode substrate and a semiconductor device with ahigh level of reliability which can eliminate defects due to gascollecting in a gas reservoir in a through-hole and allows prevention ofdropout of a filler from within the through-hole.

What is claimed is:
 1. A through-hole electrode substrate comprising: asubstrate including a through-hole extending from a first aperture of afirst surface to a second aperture of a second surface, an area of thesecond aperture being larger than an area of the first aperture, thethrough-hole having a minimum aperture part between the first apertureand the second aperture, wherein an area of the minimum aperture part ina planar view is smallest among a plurality of areas of the through-holein a planar view; an inner member arranged within the through-hole; anda gas discharge member contacting the inner member exposed to one of thefirst surface and the second surface, wherein a shape of a first sidewall of the through-hole between the first aperture and the secondaperture is a consecutive curve shape.
 2. The through-hole electrodesubstrate according to claim 1, wherein the gas discharge member has avia, and the via overlaps with the through-hole in a planar view.
 3. Thethrough-hole electrode substrate according to claim 2, wherein the viahas a tapered shape.
 4. The through-hole electrode substrate accordingto claim 3, wherein an angle between a second side wall of the via and atop surface of the inner member in a cross sectional view is 45 degreesor more and 89 degrees or less.
 5. The through-hole electrode substrateaccording to claim 1, wherein the gas discharge member has a via, andthe via does not overlap with the through-hole in a planar view.
 6. Thethrough-hole electrode substrate according to claim 5, wherein the viahas a tapered shape.
 7. The through-hole electrode substrate accordingto claim 6, wherein an angle between a second side wall of the via andone of the first surface and the second surface in a cross sectionalview is 45 degrees or more and 89 degrees or less.
 8. The through-holeelectrode substrate according to claim 1, wherein a shape between thefirst side wall and the first surface and a shape between the first sidewall and the second surface are curve shapes.
 9. The through-holeelectrode substrate according to claim 1, wherein at least a part of thefirst side wall of the through-hole in a cross-sectional view includes acurve having an inflection point.
 10. The through-hole electrodesubstrate according to claim 1, wherein a conductive film is arrangedbetween the first side wall and the inner member.
 11. A through-holeelectrode substrate comprising: a substrate including a through-holeextending from a first aperture of a first surface to a second apertureof a second surface, and including a first part and a second part, thesecond part having a larger area in a planar view than the first partand the first aperture; an inner member within the through-hole; and agas discharge member contacting the inner member exposed to one of thefirst surface and the second surface, wherein a shape of a first sidewall of the through-hole between the first aperture and the secondaperture is a consecutive curve shape.
 12. The through-hole electrodesubstrate according to claim 11, wherein the gas discharge member has avia, and the via overlaps with the through-hole in a planar view. 13.The through-hole electrode substrate according to claim 12, wherein thevia has a tapered shape.
 14. The through-hole electrode substrateaccording to claim 13, wherein an angle between a second side wall ofthe via and a top surface of the inner member in a cross sectional viewis 45 degrees or more and 89 degrees or less.
 15. The through-holeelectrode substrate according to claim 11, wherein the gas dischargemember has a via, and the via does not overlap with the through-hole ina planar view.
 16. The through-hole electrode substrate according toclaim 15, wherein the via has a tapered shape.
 17. The through-holeelectrode substrate according to claim 16, wherein an angle between asecond side wall of the via and one of the first surface and the secondsurface in a cross sectional view is 45 degrees or more and 89 degreesor less.
 18. The through-hole electrode substrate according to claim 11,wherein a shape between the first side wall and the first surface and ashape between the first side wall and the second surface are curveshapes.
 19. The through-hole electrode substrate according to claim 11,wherein at least a part of the first side wall of the through-hole in across-sectional view includes a curve having an inflection point. 20.The through-hole electrode substrate according to claim 11, wherein aconductive film is arranged between the first side wall and the innermember.